BUV27 Datasheet, PDF (1/3 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV27
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current (DC)
ICM
Collector current (peak)
IB
Base current
IBM
Base current (peak)
Ptot
Total power dissipation
Tj
Max.operating junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-case} Thermal resistance junction case
VALUE
240
120
7
12
20
4
6
85
175
-65~175
UNIT
V
V
V
A
A
A
A
W
MAX
1.76
UNIT
/W