BUV23 Datasheet, PDF (1/3 Pages) Motorola, Inc – 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV23
DESCRIPTION
·With TO-3 package
·High DC current gain
·Very fast switching times
·Low collector saturation voltage
APPLICATIONS
·Designed for high current,high speed
and high power application.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
400
325
7
30
40
6
250
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
0.7
UNIT
/W