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BUV21 Datasheet, PDF (1/3 Pages) Motorola, Inc – 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV21
DESCRIPTION
·With TO-3 package
·High DC current gain@IC=12A
·Fast switching times
·Low collector saturation voltage
APPLICATIONS
·Designed for high current,high speed
and high power applications.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
250
200
7
40
50
8
150
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
0.7
UNIT
/W