BUT12 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUT12 BUT12A
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUT12
BUT12A
VCEO
BUT12
Collector-emitter voltage
BUT12A
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB
Base current
IBM
Base current-peak
Ptot
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb225
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
850
1000
400
450
9
8
20
4
6
100
150
-65~150
UNIT
V
V
V
A
A
A
a
W
VALUE
1
UNIT
K/W