BUT11F Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUT11F BUT11AF
DESCRIPTION
·With TO-220Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUT11F
BUT11AF
VCEO
BUT11F
Collector-emitter voltage
BUT11AF
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB
Base current
IBM
Base current-peak
Ptot
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
850
1000
400
450
9
5
10
2
4
40
150
-65~150
UNIT
V
V
V
A
A
A
A
W
VALUE
3.125
UNIT
K/W