BUT11 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUT11 BUT11A
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUT11
BUT11A
VCEO
BUT11
Collector-emitter voltage
BUT11A
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
Ptot
Total power dissipation
Tf
Fall time
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb425
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
850
1000
400
450
7
5
10
2
100
0.8
150
-65~150
UNIT
V
V
V
A
A
A
W
µs
VALUE
1.25
UNIT
K/W