BUL52B Datasheet, PDF (1/3 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BUL52B
DESCRIPTION
·With TO-220C package
·High voltage
·Fast switching
·High energy rating
APPLICATIONS
·Designed for use in electronic
ballast applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
800
400
10
8
12
4
100
-55~150
UNIT
V
V
V
A
A
A
W