BU931Z Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN POWER DARLINGTON

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU931Z
DESCRIPTION
·With TO-3 package
·DARLINGTON
·High breakdown voltage
APPLICATIONS
·Application in high performance
electronic car ignition
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
IB
Base current
PT
Total power dissipation
Tj
Max.operating junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
350
350
5
20
5
175
200
-40~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-case} Thermal resistance junction case
MAX
1.0
UNIT
/W