BU921 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU921
DESCRIPTION
·With TO-3 package
·High current;high voltage
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition applications
and inverter circuits for motor control.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
450
400
5
10
15
5
120
175
-65~175
UNIT
V
V
V
A
A
A
W
MAX
1.25
UNIT
/W