BU508DW Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508DW
DESCRIPTION
·With TO-247 package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
ICP
Collector-base voltage
Collector-emitter voltage
Collector current (DC)
Collector current (Pulse)
Open emitter
Open base
IB
Base current (DC)
IBM
Base current (Pulse)
Ptot
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
TC=25
VALUE
1500
700
8
15
4
6
125
150
-65~150
UNIT
V
V
A
A
A
A
W