BU2506DF Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2506DF
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·Intended for use in horizontal deflection
circuits of colour TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
IC
Collector current (DC)
ICM
Collector current (Pulse)
IB
Base Collector current (DC)
IBM
Base current (Pulse)
Ptot
Total power dissipation
TC=25
Tj
Max.operating junction temperature
Tstg
Storage temperature
VALUE
1500
700
5
8
3
5
45
150
-65~150
UNIT
V
V
A
A
A
A
W