BU1706AX Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1706AX
DESCRIPTION
·With TO-220F package
·High voltage
·High speed switching
APPLICATIONS
·For use in high frequency electronic
lighting ballast applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current (peak)
IB
Base current
IBM
Base current (peak)
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1750
850
7.5
5
8
3
5
32
150
-40~150
UNIT
V
V
V
A
A
A
A
W