BU1506DX Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1506DX
DESCRIPTION
·With TO-220F package
·High voltage
·High speed switching
·Built-in damper diode.
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
IBM
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7.5
5
8
3
8
32
150
-40~150
UNIT
V
V
V
A
A
A
A
W