BU126 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,300V,30A)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU126
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For voltage regulator ,inverter,switching
mode power supply applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
IC
ICM
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
750
300
3.0
6.0
2.0
40
125
-65~125
UNIT
V
V
A
A
A
W
MAX
2.5
UNIT
K/W