BDY57 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDY57 BDY58
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·For use in low frequency large
signal power amplifications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BDY57
BDY58
Open emitter
VCEO
Collector-emitter voltage
BDY57
BDY58
Open base
VEBO
IC
IB
PT
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
120
160
80
125
10
25
6
175
200
-65~200
UNIT
V
V
V
A
A
W
MAX
1.0
UNIT
/W