BDY56 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDY56
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·LF large signal power amplification.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
150
120
7
15
7
117
200
-65~200
UNIT
V
V
V
A
A
W
MAX
1.5
UNIT
/W