BDX66B Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX66B
DESCRIPTION
·With TO-3 package
·High current
·DARLINGTON
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current(peak)
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-5
-16
-20
-0.25
150
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.17
UNIT
/W