BDX34 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – Transistor de puissance PNP darlington

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX34/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX33/A/B/C
APPLICATIONS
·For power linear and switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX34
VCBO
Collector-base voltage
BDX34A
BDX34B
BDX34C
BDX34
VCEO
BDX34A
Collector-emitter voltage
BDX34B
BDX34C
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-10
-15
-0.25
70
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.78
UNIT
/W