BD909 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD909 BD911
DESCRIPTION
·With TO-220C package
·Complement to type BD910 BD912
APPLICATIONS
·Intented for use in power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BD909
BD911
VCEO
Collector-emitter voltage
BD909
BD911
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC-25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
80
100
5
15
5
90
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.4
UNIT
/W