BD809 Datasheet, PDF (1/3 Pages) ON Semiconductor – POWER TRANSISTORS PNP SILICON

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD809
DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
: h_FE = 30 (Min) @ I_C = 2.0 Adc
APPLICATIONS
·Designed for use in high power audio
amplifiers utilizing complementary or
quasi complementary circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
80
5
10
6
90
150
-55~150
UNIT
V
V
V
A
A
W
MAX
1.39
UNIT
/W