BD707 Datasheet, PDF (1/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD707 BD709 BD711
DESCRIPTION
·With TO-220C package
·The BD707 and BD711are respectively
complement to type BD708 and BD712
APPLICATIONS
·Intented for use in power linear
and switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD707
VCBO
Collector-base voltage
BD709
BD711
BD707
VCEO
Collector-emitter voltage BD709
BD711
VEBO
Emitter-base voltage
IC
Collector current-DC
ICM
Collector current-Pulse
IB
Base current
PT
Total dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
100
60
80
100
5
12
18
5
75
150
-65~150
UNIT
V
V
A
A
A
W
MAX
1.67
UNIT
/W