BD675 Datasheet, PDF (1/3 Pages) Motorola, Inc – Plastic Medium-Power Silicon NPN Darlingtons

SavantIC Semiconductor
Silicon NPN Darligton Power Transistors
Product Specification
BD675/BD677/BD679
DESCRIPTION
·With TO-126 package
·Complement to type BD676/678/680
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD675
VCBO
Collector-base voltage BD677
BD679
BD675
VCEO
Collector-emitter voltage BD677
BD679
VEBO
IC
ICM
IB
PC
Emitter -base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
45
60
80
45
60
80
5
4
7
0.1
40
150
-55~150
UNIT
V
V
V
A
A
A
W
VALUE
100
3.12
UNIT
K/W
K/W