BD317 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD317
DESCRIPTION
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD318
APPLICATIONS
·Designed for high power amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current(peak)
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
100
7
16
20
5
200
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
0.875
UNIT
/W