BD249 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,125W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD249/A/B/C
DESCRIPTION
·With TO-3PN package
·Complement to type BD250/A/B/C
·125 W at 25°C case temperature
·25 A continuous collector current
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
BD249
VCEO
Collector-emitter voltage
BD249A
BD249B
BD249C
BD249
VCBO
Collector-base voltage
BD249A
BD249B
BD249C
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open base
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
45
60
80
100
55
70
90
115
5
25
40
5
125
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
1.0
UNIT
/W