BD245 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD245/A/B/C
DESCRIPTION
·With TO-3PN package
·Complement to type BD246/A/B/C
APPLICATIONS
·For use in medium power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
BD245
VCBO
Collector-base voltage
BD245A
BD245B
BD245C
BD245
VCEO
BD245A
Collector-emitter voltage
BD245B
BD245C
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
55
70
90
115
45
60
80
100
5
10
15
3
80
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
1.56
UNIT
/W