BD231 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP power transistor

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD231
DESCRIPTION
·With TO-126 package
·Complement to type BD230
·High current (Max:-1.5A)
·Low voltage (Max: -80V)
APPLICATIONS
·Drive stage in TV circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IBM
Base current-Peak
PD
Total power dissipation
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
Tamb
Operating ambient temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb462
TC=25
VALUE
-100
-80
-5
-1.5
-3
-1
12.5
10
150
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
W