BD135 Datasheet, PDF (1/3 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD135 BD137 BD139
DESCRIPTION
·With TO-126 package
·High current
·Complement to type BD136/138/140
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD135
VCBO
Collector-base voltage BD137
BD139
BD135
VCEO
Collector-emitter voltage BD137
BD139
VEBO
IC
ICM
IBM
Pt
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
Tamb
Operating ambient temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb670
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
45
60
100
45
60
100
5
1.5
2
1
8
150
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
10
UNIT
K/W
K/W