BD131 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN power transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD131
DESCRIPTION
·Complement to type BD132
·With TO-126 package
·High current (Max: 3A)
·Low voltage (Max: 45V)
APPLICATIONS
·For general purpose power applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter -base voltage
Collector current (DC)
ICM
Collector current-Peak
IBM
Base current-Peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb660
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb Thermal resistance from junction to mounting base
VALUE
70
45
6
3
6
0.5
15
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
6
UNIT
K/W
K/W