2SD687 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD687
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·DARLINGTON
·High DC current gain
APPLICATIONS
·Switching applications
·Hammer drive,pulse motor drive
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Maximum absolute ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
60
40
5
3
25
150
-50~150
UNIT
V
V
V
A
W