2SD612 Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SB632/632K
·High collector dissipation
·Wide area of safe operation
APPLICATIONS
·25V/35V, 2A low-frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SD612 2SD612K
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD612
2SD612K
Open emitter
VCEO
Collector-emitter voltage
2SD612
2SD612K
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICM
Collector current-peak
PD
Total power dissipation
Tj
Junction temperature
Ta=25
TC=25
Tstg
Storage temperature
VALUE
25
35
25
35
5
2
3
1
10
150
-55~150
UNIT
V
V
V
A
A
W