2SD600 Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD600 2SD600K
DESCRIPTION
·With TO-126 package
·Complement to type 2SB631/631K
·High breakdown voltage V_CEO100/120V
·High current 1A
·Low saturation voltage
APPLICATIONS
·For low-frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD600
2SD600K
Open emitter
VCEO
Collector-emitter voltage
2SD600
2SD600K
Open base
VEBO
IC
ICM
PD
Tj
Tstg
Emitter-base voltage
Collector current (DC)
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
Open collector
Ta=25
TC=25
VALUE
100
120
100
120
5
1
2
1
8
150
-55~150
UNIT
V
V
V
A
A
W