2SD560 Datasheet, PDF (1/3 Pages) Fujitsu Component Limited. – SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP, 100 VOLT)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD560
DESCRIPTION
·With TO-220C package
·Complement to type 2SB601
·DARLINGTON
APPLICATIONS
·Low frequency power amplifier
·Low speed switching industrial use
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
ICM
IB
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
150
100
7
5
8
0.5
30
1.5
150
-50~150
UNIT
V
V
V
A
A
A
W