2SD313 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD313
DESCRIPTION
·With TO-220C package
·Complement to type 2SB507
·Low collector saturation voltage
APPLICATIONS
·Designed for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
ICM
IB
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
R:jc
Thermal resistance junction to case
VALUE
60
60
5
3
8
1
30
150
-50~150
UNIT
V
V
V
A
A
A
W
MAX
4.16
UNIT
/W