2SD2386 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN TRIPLI DIFFUSED TYPE ( POWER AMPLIFIER APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
2SD2386
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB1557
·High breakdown voltage:V_CEO=140V(Min)
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
5
7
0.1
70
150
-55~150
UNIT
V
V
V
A
A
W