2SD2241 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2241
DESCRIPTION
·With TO-220F package
·High DC current gain : h_FE=2000 (Min)
·Low saturation voltage
·Complement to type 2SB1481
·DARLINGTON
APPLICATIONS
·With switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
100
100
5
±4
±6
0.3
2.0
25
150
-55~150
UNIT
V
V
V
A
A
A
W