2SD2012 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2012
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1366
·Low collector saturation voltage
·Collector power dissipation:
P_C=25W(T_C=25 )
APPLICATIONS
·Audio frequency power amplifier and
general purpose switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
60
60
7
3
0.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W