2SD1895 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
DESCRIPTION
·With TO-3PFa package
·High DC current gain
·Low collector saturation voltage
·Complement to type 2SB1255
APPLICATIONS
·Power amplification
·Optimum for 90W high-fidelity
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SD1895
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICP
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
160
140
5
15
8
100
3
150
-55~150
UNIT
V
V
V
A
A
W