2SD1417 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – 2SD1417

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1417
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1022
·DARLINGTON
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
60
60
5
7
0.2
30
2.0
150
-55~150
UNIT
V
V
V
A
A
W