2SD1376 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1376
DESCRIPTION
·
·With TO-126 package
·DARLINGTON
·Complement to type 2SB1012
APPLICATIONS
·For low frequency power amplifier
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
120
7
1.5
3.0
20
150
-55~150
UNIT
V
V
V
A
A
W