2SD1313 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,350V,200W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1313
DESCRIPTION
·With TO-3PL package
·High power dissipation
·High collector current
·High speed switching
·Low saturation voltage
APPLICATIONS
·High power amplifier applications
·High power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
IBM
Base current-peak
PC
Collector power dissipation
TC=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
800
350
7
25
35
10
15
200
150
-55~150
UNIT
V
V
V
A
A
A
A
W