2SC5358 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5358
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1986
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
230
230
5
15
1.5
150
150
-55~150
UNIT
V
V
V
A
A
W