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| 2SC5242 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS) | |||
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5242
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1962
·High collector voltage: VCEO=230V(Min)
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
230
230
5
15
1.5
130
150
-55~150
UNIT
V
V
V
A
A
W
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