2SC4881 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4881
DESCRIPTION
·With TO-220F package
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
60
50
5
5
8
1
2.0
20
150
-55~150
UNIT
V
V
V
A
A
A
W