2SC4793 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4793
DESCRIPTION
·With TO-220F package
·Complement to type 2SA1837
·High transition frequency
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
230
230
5
1
0.1
20
2.0
150
-55~150
UNIT
V
V
V
A
A
W