2SC3346 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SA1329
·High speed switching time
: t_stg=1.0µs(Typ.)
·Low collector saturation voltage
: V_CE(sat)=0.4V(Max.)@I_C=6A
APPLICATIONS
·For high current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3346
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
80
6
12
2
40
150
-55~150
UNIT
V
V
V
A
A
W