2SC3310 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3310
DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
·Excellent Switching times
APPLICATIONS
·Switching regulator
·High speed DC-DC converter
·High voltage switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current (pulse)
IB
Base current (DC)
PC
Collector power dissipation
T_j
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
5
7
1
2
30
150
-55~150
UNIT
V
V
V
A
A
A
W