2SC3309 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3309
DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulators and high voltage
switching applications
·High speed DC-DC converter application
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-peak
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
2
4
0.5
2.0
20
150
-50~150
UNIT
V
V
V
A
A
A
W