2SC3182 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3182
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1265
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
IB
PT
Tj
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
5
10
1
100
150
-55~150
UNIT
V
V
V
A
A
W