2SC3148 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED(for Switching Regulator and High Voltage)

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High collector breakdown voltage:
V_CEO=800V(Min)
·Excellent switching time:
t_r=1.0µs(Max.)
t_f=1.0µs(Max.@I_C=0.8A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3148
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
900
800
7
3
5
1
1.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W