2SC2793 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2793
DESCRIPTION
·With MT-200 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·High speed and high voltage switching
·Switching regulator
·High speed DC-DC converter
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
PC
T_j
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
900
800
7
5
7
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W